半导体器件导论|(美)尼曼|清华大学出版社

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半导体器件导论

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作者： (美)尼曼	出版社：清华大学出版社
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出版日期：2006-3-16	上架日期：2006-3-20 10:43:00
ISBN：7302124515	页数：版次：第1版
开本：16开	装帧：平装

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内容简介
本书是美国新墨西哥大学电机与计算机工程系Neamen教授所著的“Semiconductor Physics and Devices,3rd edition”一书的改进版本。
与原书相比，本书更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用本书，学生只需要具有高等数学和大学普通物理的基础，用一个学期就可以系统地学习到半导体器件的基本理论，从而为进入微电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。
另外，本书还尽量保持了原书的主要优点：
(1) 注重基本概念和方法。本书从内容的整体编排到具体章节的叙述，都体现了突出物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体，得出的结论不仅对理解物理概念十分重要，而且经得起反复推敲。书中还采用了大量非常清晰的插图，帮助读者更好地理解基本概念。
(2) 可读性强，便于自学。全书脉络清楚，说理透彻，易于读者理解和掌握。每一章的开头都有引言，告诉读者可以从本章学到什么，应该掌握什么；每一章中都有例题和读者自测题；每一章的最后还有总结、复习提纲和大量习题（其中包含一些采用计算机进行模拟计算的练习题）。通过举例和练习加深读者对基本概念的理解是本书突出的特点。本书的第1章至第4章介绍了固体晶格结构、固体的量子理论和半导体物理的基本知识，为后续的半导体器件分析打下了基础。第5章至第10章是全书的重点，详细讨论了PN结二极管、MOSFET和BJT器件的原理和分析方法。第11章和第12章介绍了一些其他类型的半导体器件，包括异质结器件、功率器件、MEMS器件和半导体光电器件等。从上述内容安排上我们不难看出，本书十分符合目前国内高等院校电子信息类各专业在“微电子器件与电路”方面开设公共平台课的教学需求。
本书的作者Neamen教授在美国新墨西哥大学任教长达25年，且与工业界合作密切，书中很多内容（包括例题和习题）反映了工业界的最新发展，因此本书不仅是一本很好的教科书，同时对微电子领域的工程技术人员也具有很高的参考价值。

目录
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C O N T E N T S I N B R I E F
Preface xvii
Chapter 1 The Crystal Structure of Solids 1
Chapter 2 Theory of Solids 31
Chapter 3 The Semiconductor in Equilibrium 70
Chapter 4 Carrier Transport and Excess Carrier Phenomena 128
Chapter 5 The pn Junction and Metal–Semiconductor Contact 174
Chapter 6 Fundamentals of the Metal–Oxide–Semiconductor
Field-Effect Transistor 223
Chapter 7 Metal–Oxide–Semiconductor Field-Effect Transistor:
Additional Concepts 311
Chapter 8 Nonequilibrium Excess Carriers in Semiconductors 358
Chapter 9 The pn Junction and Schottky Diodes 398
Chapter 10 The Bipolar Transistor 460
Chapter 11 Additional Semiconductor Devices and Device
Concepts 546
Chapter 12 Optical Devices 590
Appendix A Selected List of Symbols 636
Appendix B System of Units, Conversion Factors, and General
Constants 643
Appendix C The Periodic Table 647
Appendix D Unit of Energy—The Electron-Volt 648
Appendix E “Derivation” and Applications of Schr?dinger’s
Wave Equation 650
Appendix F Answers to Selected Problems 656
Index 663
ix
CONTENTS
Preface xvii
C H A P T E R 1
The Crystal Structure of Solids 1
1.0 Preview 1
1.1 Semiconductor Materials 2
1.2 Types of Solids 3
1.3 Space Lattices 4
1.3.1 Primitive and Unit Cell 4
1.3.2 Basic Crystal Structures 6
1.3.3 Crystal Planes and Miller Indices 7
1.3.4 The Diamond Structure 13
1.4 Atomic Bonding 15
1.5 Imperfections and Impurities in Solids 17
1.5.1 Imperfections in Solids 17
1.5.2 Impurities in Solids 18
1.6 Growth of Semiconductor Materials 19
1.6.1 Growth from a Melt 20
1.6.2 Epitaxial Growth 22
1.7 Device Fabrication Techniques:
Oxidation 23
1.8 Summary 25
Problems 27
C H A P T E R 2
Theory of Solids 31
2.0 Preview 31
2.1 Principles of Quantum Mechanics 32
2.1.1 Energy Quanta 32
2.1.2 Wave–Particle Duality Principle 34
2.2 Energy Quantization and Probability
Concepts 36
2.2.1 Physical Meaning of the Wave
Function 36
2.2.2 The One-Electron Atom 37
2.2.3 Periodic Table 40
2.3 Energy-Band Theory 41
2.3.1 Formation of Energy Bands 41
2.3.2 The Energy Band and the Bond Model 45
2.3.3 Charge Carriers—Electrons and Holes 47
2.3.4 Effective Mass 49
2.3.5 Metals, Insulators, and
Semiconductors 50
2.3.6 The k-Space Diagram 52
2.4 Density of States Function 55
2.5 Statistical Mechanics 57
2.5.1 Statistical Laws 57
2.5.2 The Fermi–Dirac Distribution Function
and the Fermi Energy 58
2.5.3 Maxwell–Boltzmann Approximation 62
2.6 Summary 64
Problems 65
C H A P T E R 3
The Semiconductor in Equilibrium 70
3.0 Preview 70
3.1 Charge Carriers in Semiconductors 71
3.1.1 Equilibrium Distribution of Electrons
and Holes 72
3.1.2 The n0 and p0 Equations 74
3.1.3 The Intrinsic Carrier Concentration 79
3.1.4 The Intrinsic Fermi-Level Position 82
3.2 Dopant Atoms and Energy Levels 83
3.2.1 Qualitative Description 83
3.2.2 Ionization Energy 86
3.2.3 Group III–V Semiconductors 88
3.3 Carrier Distributions in the Extrinsic
Semiconductor 89
3.3.1 Equilibrium Distribution of Electrons
and Holes 89

xi
xii Contents
3.3.2 The n0 p0 Product 93
 3.3.3 The Fermi–Dirac Integral 94
3.3.4 Degenerate and Nondegenerate
Semiconductors 96
3.4 Statistics of Donors and Acceptors 97
3.4.1 Probability Function 98
 3.4.2 Complete Ionization and Freeze-Out 99
3.5 Carrier Concentrations—Effects of
Doping 102
3.5.1 Compensated Semiconductors 102
3.5.2 Equilibrium Electron and Hole
Concentrations 102
3.6 Position of Fermi Energy Level—Effects of
Doping and Temperature 109
3.6.1 Mathematical Derivation 109
3.6.2 Variation of EF with Doping Concentration
and Temperature 112
3.6.3 Relevance of the Fermi Energy 114
3.7 Device Fabrication Technology: Diffusion and
Ion Implantation 115
3.7.1 Impurity Atom Diffusion 116
3.7.2 Impurity Atom Ion Implantation 118
3.8 Summary 119
Problems 121
C H A P T E R 4
Carrier Transport and Excess Carrier
Phenomena 128
4.0 Preview 128
4.1 Carrier Drift 129
4.1.1 Drift Current Density 129
4.1.2 Mobility Effects 132
4.1.3 Semiconductor Conductivity
and Resistivity 137
4.1.4 Velocity Saturation 143
4.2 Carrier Diffusion 145
4.2.1 Diffusion Current Density 145
4.2.2 Total Current Density 148
4.3 Graded Impurity Distribution 149
4.3.1 Induced Electric Field 149
4.3.2 The Einstein Relation 152
4.4 Carrier Generation and Recombination 153
4.4.1 The Semiconductor in Equilibrium 154
4.4.2 Excess Carrier Generation and
Recombination 155
4.4.3 Generation–Recombination Processes 158
4.5 The Hall Effect 161
4.6 Summary 164
Problems 166
C H A P T E R 5
The pn Junction and Metal–Semiconductor
Contact 174
5.0 Preview 174
5.1 Basic Structure of the pn Junction 175
5.2 The pn Junction—Zero Applied Bias 176
5.2.1 Built-In Potential Barrier 177
5.2.2 Electric Field 179
5.2.3 Space Charge Width 183
5.3 The pn Junction—Reverse Applied Bias 185
5.3.1 Space Charge Width and Electric
Field 186
5.3.2 Junction Capacitance 189
5.3.3 One-Sided Junctions 192
5.4 Metal–Semiconductor Contact— Rectifying
Junction 194
5.4.1 The Schottky Barrier 194
5.4.2 The Schottky Junction—Reverse Bias 196
5.5 Forward Applied Bias—An Introduction 197
5.5.1 The pn Junction 197
5.5.2 The Schottky Barrier Junction 199
5.5.3 Comparison of the Schottky Diode and the
pn Junction Diode 201
5.6 Metal–Semiconductor Ohmic
Contacts 203
5.7 Nonuniformly Doped pn Junctions 206
5.7.1 Linearly Graded Junctions 206
5.7.2 Hyperabrupt Junctions 208
5.8 Device Fabrication Techniques:
Photolithography, Etching,
and Bonding 210

Contents xiii
5.8.1 Photomasks and Photolithography 210
5.8.2 Etching 211
5.8.3 Impurity Diffusion or Ion
Implantation 211
5.8.4 Metallization, Bonding,
and Packaging 211
5.9 Summary 212
Problems 215
C H A P T E R 6
Fundamentals of the Metal–Oxide–
Semiconductor Field-Effect Transistor 223
6.0 Preview 223
6.1 The MOS Field-Effect Transistor Action 224
6.1.1 Basic Principle of Operation 225
6.1.2 Modes of Operation 226
6.1.3 Amplification with MOSFETs 226
6.2 The Two-Terminal MOS Capacitor 227
6.2.1 Energy-Band Diagrams and Charge
Distributions 228
6.2.2 Depletion Layer Thickness 235
6.3 Potential Differences in the
MOS Capacitor 239
6.3.1 Work Function Differences 240
6.3.2 Oxide Charges 244
6.3.3 Flat-Band Voltage 245
6.3.4 Threshold Voltage 247
 6.3.5 Electric Field Profile 254
6.4 Capacitance–Voltage Characteristics 258
6.4.1 Ideal C–V Characteristics 258
 6.4.2 Frequency Effects 263
 6.4.3 Fixed Oxide and Interface Charge
Effects 264
6.5 The Basic MOSFET Operation 268
6.5.1 MOSFET Structures 268
6.5.2 Current–Voltage Relationship—Basic
Concepts 270
 6.5.3 Current–Voltage Relationship—
Mathematical Derivation 282
6.5.4 Substrate Bias Effects 287
6.6 Small-Signal Equivalent Circuit and
Frequency Limitation Factors 290
6.6.1 Transconductance 290
6.6.2 Small-Signal Equivalent Circuit 291
6.6.3 Frequency Limitation Factors and
Cutoff Frequency 293
6.7 Device Fabrication Techniques 296
6.7.1 Fabrication of an NMOS Transistor 296
6.7.2 The CMOS Technology 297
6.8 Summary 299
Problems 301
C H A P T E R 7
Metal–Oxide–Semiconductor Field-Effect
Transistor: Additional Concepts 311
7.0 Preview 311
7.1 MOSFET Scaling 312
7.1.1 Constant-Field Scaling 312
7.1.2 Threshold Voltage—First
Approximation 313
7.1.3 Generalized Scaling 314
7.2 Nonideal Effects 315
7.2.1 Subthreshold Conduction 315
7.2.2 Channel Length Modulation 318
7.2.3 Mobility Variation 321
7.2.4 Velocity Saturation 324
7.3 Threshold Voltage Modifications 326
7.3.1 Short-Channel Effects 327
7.3.2 Narrow-Channel Effects 331
7.3.3 Substrate Bias Effects 333
7.4 Additional Electrical Characteristics 335
7.4.1 Oxide Breakdown 335
7.4.2 Near Punch-Through or Drain-Induced
Barrier Lowering 335
7.4.3 Hot Electron Effects 337
7.4.4 Threshold Adjustment by Ion
Implantation 338
7.5 Device Fabrication Techniques: Specialized
Devices 341
7.5.1 Lightly Doped Drain Transistor 342
7.5.2 The MOSFET on Insulator 343
xiv Contents
7.5.3 The Power MOSFET 345
7.5.4 MOS Memory Device 348
7.6 Summary 350
Problems 352
C H A P T E R 8
Nonequilibrium Excess Carriers
in Semiconductors 358
8.0 Preview 358
8.1 Carrier Generation and Recombination 359
8.2 Analysis of Excess Carriers 360
8.2.1 Continuity Equations 361
8.2.2 Time-Dependent Diffusion Equations 362
8.3 Ambipolar Transport 364
8.3.1 Derivation of the Ambipolar Transport
Equation 364
8.3.2 Limits of Extrinsic Doping and Low
Injection 366
8.3.3 Applications of the Ambipolar Transport
Equation 368
8.3.4 Dielectric Relaxation Time Constant 376
8.3.5 Haynes–Shockley Experiment 379
8.4 Quasi-Fermi Energy Levels 382
8.5 Excess Carrier Lifetime 385
8.5.1 Shockley–Read–Hall Theory
of Recombination 385
8.5.2 Limits of Extrinsic Doping and Low
Injection 387
8.6 Surface Effects 389
8.6.1 Surface States 389
8.6.2 Surface Recombination Velocity 390
8.7 Summary 391
Problems 392
C H A P T E R 9
The pn Junction and Schottky Diodes 398
9.0 Preview 398
9.1 The pn and Schottky Barrier Junctions
Revisited 399
9.1.1 The pn Junction 399
9.1.2 The Schottky Barrier Junction 402
9.2 The pn Junction—Ideal Current–Voltage
Relationship 404
9.2.1 Boundary Conditions 404
9.2.2 Minority-Carrier Distribution 409
9.2.3 Ideal pn Junction Current 411
9.2.4 Summary of Physics 416
9.2.5 Temperature Effects 418
9.2.6 The “Short” Diode 420
9.2.7 Summary of Results 422
9.3 The Schottky Barrier Junction—Ideal
Current–Voltage Relationship 423
9.3.1 The Schottky Diode 423
9.3.2 Comparison of the Schottky Diode
and the pn Junction Diode 426
9.4 Small-Signal Model of the pn Junction 428
9.4.1 Diffusion Resistance 428
9.4.2 Small-Signal Admittance 430
9.4.3 Equivalent Circuit 432
9.5 Generation-Recombination Currents 434
9.5.1 Reverse-Bias Generation Current 434
9.5.2 Forward-Bias Recombination Current 437
9.5.3 Total Forward-Bias Current 439
9.6 Junction Breakdown 441
9.7 Charge Storage and Diode Transients 446
9.7.1 The Turn-Off Transient 446
9.7.2 The Turn-On Transient 449
9.8 Summary 449
Problems 451
C H A P T E R 10
The Bipolar Transistor 460
10.0 Preview 460
10.1 The Bipolar Transistor Action 461
10.1.1 The Basic Principle of Operation 462
10.1.2 Simplified Transistor Current
Relations 466
10.1.3 The Modes of Operation 468
10.1.4 Amplification with Bipolar
Transistors 470
Contents xv
10.2 Minority-Carrier Distribution 472
10.2.1 Forward-Active Mode 472
10.2.2 Other Modes of Operation 480
10.3 Low-frequency Common-Base
Current Gain 483
10.3.1 Contributing Factors 483
10.3.2 Mathematical Derivation of Current
Gain Factors 486
10.3.3 Summary and Review 489
10.3.4 Example Calculations of the
Gain Factors 490
10.4 Nonideal Effects 495
10.4.1 Base Width Modulation 495
10.4.2 High Injection 499
10.4.3 Emitter Bandgap Narrowing 501
10.4.4 Current Crowding 503
 10.4.5 Nonuniform Base Doping 506
10.4.6 Breakdown Voltage 507
10.5 Hybrid-Pi Equivalent Circuit Model 513
10.6 Frequency Limitations 517
10.6.1 Time-Delay Factors 517
10.6.2 Transistor Cutoff Frequency 519
10.7 Large-Signal Switching 522
10.8 Device Fabrication Techniques 524
10.8.1 Polysilicon Emitter BJT 524
10.8.2 Fabrication of Double-Polysilicon
npn Transistor 525
10.8.3 Silicon-Germanium Base
Transistor 527
10.8.4 The Power BJT 529
10.9 Summary 533
Problems 535
C H A P T E R 11
Additional Semiconductor Devices
and Device Concepts 546
11.0 Preview 546
11.1 The Junction Field-Effect Transistor 547
11.1.1 The pn JFET 547
11.1.2 The MESFET 551
11.1.3 Electrical Characteristics 553
11.2 Heterojunctions 560
11.2.1 The Heterojunction 560
11.2.2 Heterojunction Bipolar Transistors 564
11.2.3 High-Electron Mobility Transistor 566
11.3 The Thyristor 567
11.3.1 The Basic Characteristics 568
11.3.2 Triggering the SCR 570
11.3.3 Device Structures 574
11.4 Additional MOSFET Concepts 578
11.4.1 Latch-Up 578
11.4.2 Breakdown 580
11.5 Microelectromechanical Systems
(MEMS) 583
11.5.1 Accelerometers 583
11.5.2 Inkjet Printing 584
11.5.3 Biomedical Sensors 584
11.6 Summary 586
Problems 587
C H A P T E R 12
Optical Devices 590
12.0 Preview 590
12.1 Optical Absorption 591
12.1.1 Photon Absorption Coefficient 591
12.1.2 Electron–Hole Pair Generation
Rate 594
12.2 Solar Cells 596
12.2.1 The pn Junction Solar Cell 596
12.2.2 Conversion Efficiency and Solar
Concentration 599
12.2.3 The Heterojunction Solar Cell 601
12.2.4 Amorphous Silicon Solar Cells 603
12.3 Photodetectors 605
12.3.1 Photoconductor 605
12.3.2 Photodiode 608
12.3.3 PIN Photodiode 611
12.3.4 Avalanche Photodiode 614
12.3.5 Phototransistor 614
12.4 Light-Emitting Diodes 616
12.4.1 Generation of Light 616
xvi Contents
12.4.2 Internal Quantum Efficiency 616
12.4.3 External Quantum Efficiency 618
12.4.4 LED Devices 620
12.5 Laser Diodes 622
12.5.1 Stimulated Emission and Population
Inversion 622
12.5.2 Optical Cavity 625
12.5.3 Threshold Current 627
12.5.4 Device Structures and
Characteristics 627
12.6 Summary 629
Problems 631
A P P E N D I X A
Selected List of Symbols 636
A P P E N D I X B
System of Units, Conversion Factors,
and General Constants 643
A P P E N D I X C
Unit of Energy—The Electron-Volt 647
A P P E N D I X D
“Derivation” and Applications of
Schr?dinger’s Wave Equation 649
Index 655

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